الوصف
Overview
SK hynix DDR4 SDRAM
ICT environment today requires continuous improvement of data processing capability. Waves of new technology including cloud computing and big data analytics are asking for higher-density, better-performing memory.
SK hynix DDR4 SDRAM is the optimal solution for these demands. Equipped with higher bandwidth and greater reliability, our DDR4 products provide supreme performance for servers and PCs of various specifications.
As performances improve, energy costs increasingly becomes an issue that cannot be overlooked. SK hynix’s low power technology solves this issue with better energy efficiency.
New Features, More Capabilities
DDR4 introduces new and improved features, which makes it even more capable than the earlier DRAM generations.

- Bank Grouping
- Fine Granularity Refresh
- Self Refresh Abort
Reliability
- Write CRC
- CA Parity
- MRS Readout
- TRR
- PPR
Test
- Boundary Scan
Power
- TCSR
- TCAR
- CS to Command/Address Latency
- VDDQ Termination
- Max Power Saving Mode
- 0.5KB Page Size
- DBI
- 3DS
Signaling
- Gear Down Mode
- Internal Vref DQ
- Per DRAM Addressability
Performance Comparison
DDR4 outperforms the earlier generations in bandwidth, reliability, power consumption, and many more features.
Higher Bandwidth
x64 bit per line – 2012년:DDR3(1866Mbps) / 2013년:DDR4(2133Mbps) / 2014년:DDR4(2400Mbps) / 2015년:DDR4(2667Mbps) / 이후:DDR4(3200Mbps)
DDR4 supports speed of 2133 to JEDEC-defined 3200Mbps.
Lower Power Consumption
Supply Voltage Reduction – DDR4는 DDR3의 1.5V보다 20%, DDR3L의 1.35V보다 11% 감소된 1.2V의 전력 소비를 나타낸다.
With voltage 20% lower than that of DDR3, DDR4 allows lower power consumption and TCO reduction.
High Reliability
Error Detection at Command & Data Bus – DD4는 CRC, CA Parity, CRC를 통해 보다 높은 신뢰성을 보장한다.
DDR4 provides numerous reliability features including ECC. Cyclic Redundancy Check (CRC), Command Address Parity and more new features guarantee greater reliability.
Product List
| Select a Product | Den. | Org. | Vol | Speed | Power | PKG | Product Status |
|---|---|---|---|---|---|---|---|
Speed
| Part No. | Den. | Org. | Vol | Speed | Power | PKG | Product Status |
|---|---|---|---|---|---|---|---|
| H5AN4G4NAFR |
4Gb | x4 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN4G4NBJR |
4Gb | x4 | 1.2V | TF/UH | Normal Power | FBGA | Engineering sample |
| H5AN4G8NAFR |
4Gb | x8 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN4G8NBJR |
4Gb | x8 | 1.2V | TF/UH | Normal Power | FBGA | Engineering sample |
| H5AN4G6NAFR |
4Gb | x16 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN4G6NBJR |
4Gb | x16 | 1.2V | TF/UH | Normal Power | FBGA | Engineering sample |
| H5AN8G4NAFR |
8Gb | x4 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN8G4NAMR |
8Gb | x4 | 1.2V | TF/UH | Normal Power | FBGA STACK | Mass production |
| H5AN8G4NCJR |
8Gb | x4 | 1.2V | UH/VK/WM/XN | Normal Power | FBGA | Engineering sample |
| H5AN8G4NMFR |
8Gb | x4 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN8G8NAFR |
8Gb | x8 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN8G8NCJR |
8Gb | x8 | 1.2V | UH/VK/WM/XN | Normal Power | FBGA | Engineering sample |
| H5AN8G8NMFR |
8Gb | x8 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN8G6NAFR |
8Gb | x16 | 1.2V | TF/UH/VK | Normal Power | FBGA | Mass production |
| H5AN8G6NCJR |
8Gb | x16 | 1.2V | UH/VK/WM/XN | Normal Power | FBGA | Engineering sample |
| H5ANAG4NMMR |
16Gb | x4 | 1.2V | TF/UH | Normal Power | FBGA STACK | Customer sample |






